STW21NM60ND
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-247 Tube
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Buying Options
Total Price: USD $1.67
Unit Price: USD $1.6723
≥1 USD $1.6723
≥10 USD $2.7683
≥100 USD $2.68185
≥500 USD $2.5954
≥1000 USD $2.50895
Inventory: 1106
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 42 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
Series FDmesh? II
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 220mOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STW21N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 140W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 140W
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 220m Ω @ 8.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 50V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Rise Time 16 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 48 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 17A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 68A
Dimensions
Height 20.15mm
Length 15.75mm
Width 5.15mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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