DS Breakdown Voltage-Min 600V
Pulsed Drain Current-Max (IDM) 52A
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 13A
Turn-Off Delay Time 55 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 285m Ω @ 6.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 110W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn) - annealed
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ