STW18NK80Z
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 800V 19A TO-247
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Buying Options
Total Price: USD $1.66
Unit Price: USD $1.65965
≥1 USD $1.65965
≥10 USD $1.36135
≥100 USD $1.31955
≥500 USD $1.2768
≥1000 USD $1.23405
Inventory: 1197
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 700 mJ
Pulsed Drain Current-Max (IDM) 76A
Drain to Source Breakdown Voltage 800V
Drain-source On Resistance-Max 0.38Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 19A
Turn-Off Delay Time 140 ns
Fall Time (Typ) 32 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 32ns
Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V
Current - Continuous Drain (Id) @ 25°C 19A Tc
Input Capacitance (Ciss) (Max) @ Vds 6100pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 150μA
Rds On (Max) @ Id, Vgs 380m Ω @ 10A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Power Dissipation 350W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 350W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number STW18N
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 19A
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 800V
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series SuperMESH?
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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