STW18N65M5
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N CH 650V 15A TO-247
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Buying Options
Total Price: USD $3.23
Unit Price: USD $3.2296
≥1 USD $3.2296
≥10 USD $2.55904
≥100 USD $2.1934
≥500 USD $1.949666
≥1000 USD $1.669404
≥3000 USD $1.571918
Inventory: 641
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 17 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh? V
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Base Part Number STW18N
JESD-30 Code R-PSFM-T3
Number of Elements 1
Power Dissipation-Max 110W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 110W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 220m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1240pF @ 100V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Rise Time 7ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 9 ns
Continuous Drain Current (ID) 15A
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.22Ohm
Drain to Source Breakdown Voltage 650V
Pulsed Drain Current-Max (IDM) 60A
Avalanche Energy Rating (Eas) 210 mJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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