Max Junction Temperature (Tj) 150°C
Avalanche Energy Rating (Eas) 550 mJ
Drain to Source Breakdown Voltage 1kV
Drain Current-Max (Abs) (ID) 9A
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 8.3A
Turn-Off Delay Time 98 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1000V
Gate Charge (Qg) (Max) @ Vgs 162nC @ 10V
Current - Continuous Drain (Id) @ 25°C 8.3A Tc
Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Rds On (Max) @ Id, Vgs 1.38 Ω @ 4.15A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 230W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, HIGH VOLTAGE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ