Drain to Source Breakdown Voltage 55V
Drain Current-Max (Abs) (ID) 250A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 200A
Turn-Off Delay Time 110 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Current - Continuous Drain (Id) @ 25°C 200A Tc
Input Capacitance (Ciss) (Max) @ Vds 6800pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 2.2m Ω @ 75A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 300W Tc
Peak Reflow Temperature (Cel) 250
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn) - annealed
Number of Terminations 10
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ