Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 10
Technology MOSFET (Metal Oxide)
Qualification Status Not Qualified
Power Dissipation-Max 210W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.8m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 160A Tc
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Operating Temperature 175°C TJ
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 160A
Gate to Source Voltage (Vgs) 15V
Drain-source On Resistance-Max 0.0038Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 640A
Avalanche Energy Rating (Eas) 1000 mJ