STV160NF03LAT4
RoHS 
RoHS compliant
RoHS compliantPackage PowerSO-10 Exposed Bottom Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 160A POWERSO-10
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Buying Options
Total Price: USD $2.62
Unit Price: USD $2.61547
≥1 USD $2.61547
≥10 USD $2.46742
≥100 USD $2.327755
≥500 USD $2.195996
≥1000 USD $2.071701
Inventory: 1169
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerSO-10 Exposed Bottom Pad
Number of Pins 12
Transistor Element Material SILICON
Technical
Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Series STripFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 10
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Base Part Number STV160
Pin Count 10
JESD-30 Code R-PDSO-G10
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 210W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 210W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 160A Tc
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Rise Time 380ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±15V
Fall Time (Typ) 150 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 160A
Gate to Source Voltage (Vgs) 15V
Drain-source On Resistance-Max 0.004Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 640A
Avalanche Energy Rating (Eas) 330 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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