Drain to Source Breakdown Voltage 40V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 80A
Turn-Off Delay Time 46.1 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Input Capacitance (Ciss) (Max) @ Vds 2150pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 6.3m Ω @ 40A, 10V
Turn On Delay Time 10.5 ns
Element Configuration Single
Power Dissipation-Max 70W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Powers
Moisture Sensitivity Level (MSL) Not Applicable
Series DeepGATE?, STripFET? VI
Operating Temperature -55°C~175°C TJ