Avalanche Energy Rating (Eas) 99 mJ
DS Breakdown Voltage-Min 600V
Pulsed Drain Current-Max (IDM) 20A
Drain-source On Resistance-Max 0.95Ohm
Drain Current-Max (Abs) (ID) 5A
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 5A
Turn-Off Delay Time 19.3 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Gate Charge (Qg) (Max) @ Vgs 8.8nC @ 10V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Input Capacitance (Ciss) (Max) @ Vds 271pF @ 100V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 950m Ω @ 2.5A, 10V
Transistor Application SWITCHING
Turn On Delay Time 7.6 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 60W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ