Operating Mode ENHANCEMENT MODE
Turn On Delay Time 9.5 ns
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.9m Ω @ 37.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2030pF @ 10V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 23.8nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Turn-Off Delay Time 37 ns
Continuous Drain Current (ID) 75A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0084Ohm
Power Dissipation-Max 60W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn) - annealed
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series DeepGATE?, STripFET? VI
Operating Temperature -55°C~175°C TJ