Avalanche Energy Rating (Eas) 110 mJ
Pulsed Drain Current-Max (IDM) 10A
Drain to Source Breakdown Voltage 525V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 2.5A
Turn-Off Delay Time 21 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Current - Continuous Drain (Id) @ 25°C 2.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 334pF @ 100V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Rds On (Max) @ Id, Vgs 2.6 Ω @ 1.25A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 45W Tc
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature ULTRA-LOW RESISTANCE
Terminal Finish Matte Tin (Sn) - annealed
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ