Avalanche Energy Rating (Eas) 110 mJ
DS Breakdown Voltage-Min 25V
Pulsed Drain Current-Max (IDM) 160A
Drain-source On Resistance-Max 0.0161Ohm
Gate to Source Voltage (Vgs) 22V
Continuous Drain Current (ID) 40A
Turn-Off Delay Time 17.6 ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Drain to Source Voltage (Vdss) 25V
Gate Charge (Qg) (Max) @ Vgs 6.3nC @ 5V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 20V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 12.4m Ω @ 20A, 10V
Transistor Application SWITCHING
Turn On Delay Time 4.8 ns
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 35W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn) - annealed
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ