STT7P2UH7
RoHS 
RoHS compliant
RoHS compliantPackage SOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET POWER MOSFET
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Buying Options
Total Price: USD $2.39
Unit Price: USD $2.38545
≥1 USD $2.38545
≥10 USD $1.957
≥100 USD $1.8962
≥500 USD $1.8354
≥1000 USD $1.77365
Inventory: 1602
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Weight 36.003894mg
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Series STripFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 19.5mOhm
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STT7P
JESD-30 Code R-PDSO-G6
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.6W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 12.5 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 22.5m Ω @ 3.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2390pF @ 16V
Current - Continuous Drain (Id) @ 25°C 7A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V
Rise Time 30.5ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 84.5 ns
Turn-Off Delay Time 128 ns
Continuous Drain Current (ID) 7A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 7A
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 28A
Compliance
RoHS Status ROHS3 Compliant
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