Drain Current-Max (Abs) (ID) 4A
Continuous Drain Current (ID) 4A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 4A Ta
Input Capacitance (Ciss) (Max) @ Vds 639pF @ 25V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 56m Ω @ 2A, 10V
Power Dissipation-Max 1.6W Ta
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series DeepGATE?, STripFET? H6
Operating Temperature 150°C TJ