Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STSJ100N
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3W Ta 70W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5m Ω @ 12.5A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4450pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 25A
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 100A
Drain-source On Resistance-Max 0.005Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 400A
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ