Drain Current-Max (Abs) (ID) 7A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 40V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 2850pF @ 25V
Vgs(th) (Max) @ Id 1V @ 250μA (Min)
Rds On (Max) @ Id, Vgs 20.5m Ω @ 3.5A, 10V
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.7W Ta
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ