Pulsed Drain Current-Max (IDM) 20A
Drain to Source Breakdown Voltage -20V
Drain Current-Max (Abs) (ID) 5A
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 5A
Turn-Off Delay Time 39 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 6nC @ 2.5V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Input Capacitance (Ciss) (Max) @ Vds 412pF @ 15V
Vgs(th) (Max) @ Id 450mV @ 250μA
Rds On (Max) @ Id, Vgs 80m Ω @ 2.5A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.5W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ