Pulsed Drain Current-Max (IDM) 20A
Drain to Source Breakdown Voltage 150V
Drain-source On Resistance-Max 0.063Ohm
Drain Current-Max (Abs) (ID) 5A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 5A
Turn-Off Delay Time 39.7 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Input Capacitance (Ciss) (Max) @ Vds 2710pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 63m Ω @ 2.5A, 10V
Transistor Application SWITCHING
Turn On Delay Time 13.5 ns
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.5W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series DeepGATE?, STripFET?
Operating Temperature -55°C~150°C TJ