FET Feature Schottky Diode (Isolated)
Drain to Source Breakdown Voltage -30V
Drain-source On Resistance-Max 0.095Ohm
Drain Current-Max (Abs) (ID) 4A
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 5A
Turn-Off Delay Time 125 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 16nC @ 5V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 25V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 55m Ω @ 2.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.5W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ