Operating Temperature 150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 200m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 600mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 315pF @ 15V
Current - Continuous Drain (Id) @ 25°C 2.5A Tc
Gate Charge (Qg) (Max) @ Vgs 4.7nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.7V 4.5V
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 2.5A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 2A
Drain-source On Resistance-Max 0.25Ohm
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 10A
FET Feature Schottky Diode (Isolated)