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STS2DPFS20V

STMicroelectronics
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 20V 2.5A 8-SOIC
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Buying Options
Total Price: USD $0.51
Unit Price: USD $0.51205
≥1 USD $0.51205
≥10 USD $0.4199
≥100 USD $0.4066
≥500 USD $0.39425
≥1000 USD $0.38095
Inventory: 1152
Minimum: 1
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Series STripFET? II
JESD-609 Code e4
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory Other Transistors
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -2.5A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STS2D
Pin Count 8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 200m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 600mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 315pF @ 15V
Current - Continuous Drain (Id) @ 25°C 2.5A Tc
Gate Charge (Qg) (Max) @ Vgs 4.7nC @ 4.5V
Rise Time 30ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.7V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 2.5A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 2A
Drain-source On Resistance-Max 0.25Ohm
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 10A
FET Feature Schottky Diode (Isolated)

Compliance

RoHS Status ROHS3 Compliant

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