STS26N3LLH6
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 26A 8-SOIC
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Buying Options
Total Price: USD $22.14
Unit Price: USD $22.1426
≥1 USD $22.1426
≥10 USD $18.1678
≥100 USD $17.60065
≥500 USD $17.03255
≥1000 USD $16.4654
Inventory: 1180
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 20 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series DeepGATE?, STripFET? VI
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 4.4mOhm
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Base Part Number STS26
Pin Count 8
Number of Elements 1
Power Dissipation-Max 2.7W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.7W
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.4m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4040pF @ 25V
Current - Continuous Drain (Id) @ 25°C 26A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 4.5V
Rise Time 18 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 46 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 26A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 525 mJ
Nominal Vgs 1 V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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