Drain to Source Breakdown Voltage 600V
Drain Current-Max (Abs) (ID) 0.3A
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 300mA
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Current - Continuous Drain (Id) @ 25°C 300mA Tc
Input Capacitance (Ciss) (Max) @ Vds 156pF @ 25V
Vgs(th) (Max) @ Id 3.7V @ 250μA
Rds On (Max) @ Id, Vgs 8.5 Ω @ 500mA, 10V
Transistor Application SWITCHING
Turn On Delay Time 6.5 ns
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -65°C~150°C TJ