Avalanche Energy Rating (Eas) 2000 mJ
Pulsed Drain Current-Max (IDM) 60A
Drain to Source Breakdown Voltage 40V
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 7.5A
Turn-Off Delay Time 62 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Input Capacitance (Ciss) (Max) @ Vds 2530pF @ 25V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 5m Ω @ 7.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.7W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish NICKEL PALLADIUM GOLD
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ