Drain to Source Breakdown Voltage 20V
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 2.3A
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Gate Charge (Qg) (Max) @ Vgs 4.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 367pF @ 16V
Vgs(th) (Max) @ Id 700mV @ 250μA (Min)
Rds On (Max) @ Id, Vgs 30m Ω @ 2A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 350mW Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ