STP8NK80Z
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 800V 6.2A 3-Pin(3+Tab) TO-220 Tube
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Buying Options
Total Price: USD $2.84
Unit Price: USD $2.8424
≥1 USD $2.8424
≥10 USD $2.254032
≥100 USD $1.931952
≥500 USD $1.717302
≥1000 USD $1.470445
≥3000 USD $1.384574
Inventory: 990
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperMESH?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Current Rating 6.2A
Base Part Number STP8N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 140W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 140W
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 3.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1320pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.2A Tc
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Rise Time 30 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 28 ns
Turn-Off Delay Time 48 ns
Continuous Drain Current (ID) 6.2A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 24.8A
Dimensions
Height 15.75mm
Length 10.4mm
Width 4.6mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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