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STP8NK100Z

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 1KV 6.5A 3-Pin(3+Tab) TO-220 Tube
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Buying Options
Total Price: USD $4.44
Unit Price: USD $4.444
≥1 USD $4.444
≥10 USD $3.523168
≥100 USD $3.019896
≥500 USD $2.684317
≥1000 USD $2.298446
≥3000 USD $2.164237
Inventory: 623
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperMESH?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 1.85Ohm
Terminal Finish TIN
Subcategory FET General Purpose Power
Voltage - Rated DC 1kV
Technology MOSFET (Metal Oxide)
Current Rating 6.5A
Base Part Number STP8N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 160W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 160W
Case Connection ISOLATED
Turn On Delay Time 28 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.85 Ω @ 3.15A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 2180pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.5A Tc
Gate Charge (Qg) (Max) @ Vgs 102nC @ 10V
Rise Time 19 ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 59 ns
Continuous Drain Current (ID) 6.5A
Threshold Voltage 3.75V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 1kV

Dimensions

Height 9.15mm
Length 10.4mm
Width 4.6mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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