STP80N70F6
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-Ch 68V 0.0063Ohm 96A STripFET VI
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Drain to Source Breakdown Voltage 68V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 96A
Turn-Off Delay Time 102 ns
Fall Time (Typ) 23 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 29ns
Gate Charge (Qg) (Max) @ Vgs 99nC @ 10V
Current - Continuous Drain (Id) @ 25°C 96A Tc
Input Capacitance (Ciss) (Max) @ Vds 5850pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 8m Ω @ 48A, 10V
FET Type N-Channel
Turn On Delay Time 23 ns
Power Dissipation 110W
Power Dissipation-Max 110W Tc
Configuration Single
Number of Elements 1
Base Part Number STP80N
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Powers
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series DeepGATE?, STripFET? VI
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 42 Weeks
Alternative Model
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