STP80N20M5
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 61A TO-220
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Buying Options
Total Price: USD $1.88
Unit Price: USD $1.88005
≥1 USD $1.88005
≥10 USD $1.5428
≥100 USD $1.49435
≥500 USD $1.4459
≥1000 USD $1.39745
Inventory: 174
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh? V
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 23MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STP80N
Pin Count 3
Number of Elements 1
Voltage 200V
Power Dissipation-Max 190W Tc
Element Configuration Single
Current 61A
Operating Mode ENHANCEMENT MODE
Power Dissipation 190W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 23m Ω @ 30.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4329pF @ 50V
Current - Continuous Drain (Id) @ 25°C 61A Tc
Gate Charge (Qg) (Max) @ Vgs 104nC @ 10V
Rise Time 31ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 176 ns
Turn-Off Delay Time 131 ns
Continuous Drain Current (ID) 61A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 200V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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