Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 90W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.05 Ω @ 3.25A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.5A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 3.25A
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 6.5A
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 26A
Avalanche Energy Rating (Eas) 240 mJ