Avalanche Energy Rating (Eas) 88 mJ
Pulsed Drain Current-Max (IDM) 24A
Drain to Source Breakdown Voltage 800V
Drain Current-Max (Abs) (ID) 6A
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 6A
Turn-Off Delay Time 23.7 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 13.4nC @ 10V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 100V
Vgs(th) (Max) @ Id 5V @ 100μA
Rds On (Max) @ Id, Vgs 1.2 Ω @ 3A, 10V
Transistor Application SWITCHING
Turn On Delay Time 11.3 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 110W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ