Drain to Source Breakdown Voltage 68V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 80A
Turn-Off Delay Time 90 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Input Capacitance (Ciss) (Max) @ Vds 2550pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 14m Ω @ 40A, 10V
Element Configuration Single
Power Dissipation-Max 190W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ