STP70N10F4
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 65A TO-220
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Buying Options
Total Price: USD $0.91
Unit Price: USD $0.91295
≥1 USD $0.91295
≥10 USD $0.74955
≥100 USD $0.7258
≥500 USD $0.703
≥1000 USD $0.67925
Inventory: 1132
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Pulsed Drain Current-Max (IDM) 260A
Drain to Source Breakdown Voltage 100V
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 65A
Turn-Off Delay Time 65 ns
Fall Time (Typ) 20 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 20ns
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
Current - Continuous Drain (Id) @ 25°C 65A Tc
Input Capacitance (Ciss) (Max) @ Vds 5800pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 19.5m Ω @ 30A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 30 ns
Power Dissipation 150W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 150W Tc
Number of Elements 1
Pin Count 3
Base Part Number STP70N
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Resistance 19.5mOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Obsolete
JESD-609 Code e3
Series DeepGATE?, STripFET?
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin
Alternative Model
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