Max Junction Temperature (Tj) 150°C
Pulsed Drain Current-Max (IDM) 20A
Drain to Source Breakdown Voltage 1.2kV
Drain Current-Max (Abs) (ID) 6A
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 6A
Turn-Off Delay Time 58 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1200V
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Input Capacitance (Ciss) (Max) @ Vds 1050pF @ 100V
Vgs(th) (Max) @ Id 5V @ 100μA
Rds On (Max) @ Id, Vgs 2.4 Ω @ 2.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 150W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ