Avalanche Energy Rating (Eas) 400 mJ
Pulsed Drain Current-Max (IDM) 240A
Drain to Source Breakdown Voltage 60V
Drain-source On Resistance-Max 0.016Ohm
Gate to Source Voltage (Vgs) 15V
Continuous Drain Current (ID) 60A
Turn-Off Delay Time 125 ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Gate Charge (Qg) (Max) @ Vgs 70nC @ 5V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Input Capacitance (Ciss) (Max) @ Vds 4150pF @ 25V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 14m Ω @ 30A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 150W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature LOW THRESHOLD
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 175°C TJ