Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 22V
Continuous Drain Current (ID) 48A
Turn-Off Delay Time 19 ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Gate Charge (Qg) (Max) @ Vgs 8.8nC @ 5V
Current - Continuous Drain (Id) @ 25°C 48A Tc
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 25V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 8.4m Ω @ 24A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 60W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature ULTRA-LOW RESISTANCE
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ