Avalanche Energy Rating (Eas) 70 mJ
DS Breakdown Voltage-Min 950V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 3.5A
Turn-Off Delay Time 32 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 950V
Gate Charge (Qg) (Max) @ Vgs 12.5nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 220pF @ 100V
Vgs(th) (Max) @ Id 5V @ 100μA
Rds On (Max) @ Id, Vgs 2.5 Ω @ 1.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 70W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ