Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 95W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 27.5A, 10V
Vgs(th) (Max) @ Id 1.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 55A Tc
Gate Charge (Qg) (Max) @ Vgs 37nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 10V 5V
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 55A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 220A