Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 80W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 575pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3A Tc
Gate Charge (Qg) (Max) @ Vgs 22.5nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 3A
Drain to Source Breakdown Voltage 800V