Drain to Source Breakdown Voltage 600V
Drain Current-Max (Abs) (ID) 4A
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 4A
Turn-Off Delay Time 29 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Rds On (Max) @ Id, Vgs 2 Ω @ 2A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 25W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ