Avalanche Energy Rating (Eas) 241 mJ
Pulsed Drain Current-Max (IDM) 180A
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.02Ohm
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 45A
Turn-Off Delay Time 20 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 5V
Current - Continuous Drain (Id) @ 25°C 45A Tc
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 25V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 18m Ω @ 22.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 70W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) Not Applicable
Operating Temperature -55°C~175°C TJ