STP40N60M2
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 600V 34A 3-Pin(3+Tab) TO-220 Tube
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Buying Options
Total Price: USD $14.39
Unit Price: USD $14.3868
≥1 USD $14.3868
≥10 USD $11.8047
≥100 USD $11.43515
≥500 USD $11.06655
≥1000 USD $10.69795
Inventory: 7605
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Dimensions
Height 19.68mm
Technical
Max Junction Temperature (Tj) 150°C
Avalanche Energy Rating (Eas) 500 mJ
Drain to Source Breakdown Voltage 600V
Drain-source On Resistance-Max 0.088Ohm
Gate to Source Voltage (Vgs) 25V
JEDEC-95 Code TO-220AB
Threshold Voltage 2V
Continuous Drain Current (ID) 34A
Turn-Off Delay Time 96 ns
Fall Time (Typ) 11 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 13.5 ns
Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V
Current - Continuous Drain (Id) @ 25°C 34A Tc
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 100V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 88m Ω @ 17A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 20.5 ns
Case Connection DRAIN
Power Dissipation 250W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 250W Tc
Number of Channels 1
Number of Elements 1
JESD-30 Code R-PSFM-T3
Base Part Number STP40N
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series MDmesh? II Plus
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 329.988449mg
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 16 Weeks
Alternative Model
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