DS Breakdown Voltage-Min 900V
Drain Current-Max (Abs) (ID) 3A
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 3A
Turn-Off Delay Time 45 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 900V
Gate Charge (Qg) (Max) @ Vgs 22.7nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3A Tc
Input Capacitance (Ciss) (Max) @ Vds 590pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Rds On (Max) @ Id, Vgs 4.8 Ω @ 1.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 25W Tc
Peak Reflow Temperature (Cel) 245
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ