Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 2.3A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 500V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Current - Continuous Drain (Id) @ 25°C 2.3A Tc
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Rds On (Max) @ Id, Vgs 3.3 Ω @ 1.15A, 10V
Power Dissipation-Max 45W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ