STP36N60M6
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CHANNEL 600V 30A TO220
PDF
/
Buying Options
Total Price: USD $5.86
Unit Price: USD $5.8608
≥1 USD $5.8608
≥10 USD $4.64112
≥100 USD $3.978128
≥500 USD $3.536139
≥1000 USD $3.027825
≥3000 USD $2.851015
Inventory: 172
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Physical
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Series MDmesh? M6
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STP36N
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 208W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 99m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1960pF @ 100V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 44.3nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 30A
Drain-source On Resistance-Max 0.099Ohm
Pulsed Drain Current-Max (IDM) 102A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 750 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
Recommended For You
STP36N60M6+price,STP36N60M6+datasheet,STP36N60M6+in stock,buy+STP36N60M6,finder+STP36N60M6,STP36N60M6+tutorials,STP36N60M6+download