Avalanche Energy Rating (Eas) 780 mJ
DS Breakdown Voltage-Min 650V
Pulsed Drain Current-Max (IDM) 96A
Drain-source On Resistance-Max 0.14Ohm
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 24A
Turn-Off Delay Time 72.5 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 650V
Gate Charge (Qg) (Max) @ Vgs 41.5nC @ 10V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Input Capacitance (Ciss) (Max) @ Vds 1790pF @ 100V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 140m Ω @ 12A, 10V
Transistor Application SWITCHING
Turn On Delay Time 13.5 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 190W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ