STP32N65M5
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220 Tube
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Buying Options
Total Price: USD $5.82
Unit Price: USD $5.8168
≥1 USD $5.8168
≥10 USD $4.307952
≥100 USD $4.077832
Inventory: 396
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh? V
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Avalanche Energy Rating (Eas) 650 mJ
Pulsed Drain Current-Max (IDM) 96A
Drain to Source Breakdown Voltage 650V
Gate to Source Voltage (Vgs) 25V
JEDEC-95 Code TO-220AB
Threshold Voltage 4V
Continuous Drain Current (ID) 24A
Turn-Off Delay Time 53 ns
Fall Time (Typ) 16 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 12 ns
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Input Capacitance (Ciss) (Max) @ Vds 3320pF @ 100V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 119m Ω @ 12A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 53 ns
Power Dissipation 150W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 150W Tc
Number of Elements 1
Pin Count 3
Base Part Number STP32N
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE ENERGY RATED
Terminal Finish Matte Tin (Sn)
Resistance 119MOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.6mm
Length 10.4mm
Height 15.75mm
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