STP30NM60N
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-220 Tube
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Buying Options
Total Price: USD $6.84
Unit Price: USD $6.83905
≥1 USD $6.83905
≥10 USD $5.61165
≥100 USD $5.43685
≥500 USD $5.2611
≥1000 USD $5.0863
Inventory: 1324
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh? II
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 130mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STP30N
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 100A
Avalanche Energy Rating (Eas) 900 mJ
Nominal Vgs 3 V
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 25A
Turn-Off Delay Time 125 ns
Fall Time (Typ) 70 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 24ns
Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V
Current - Continuous Drain (Id) @ 25°C 25A Tc
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 130m Ω @ 12.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Power Dissipation 190W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 190W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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