STP30NM30N
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 300V 30A TO-220
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Buying Options
Total Price: USD $21.66
Unit Price: USD $21.661525
≥1 USD $21.661525
≥10 USD $20.435403
≥100 USD $19.278683
≥500 USD $18.187436
≥1000 USD $17.157959
Inventory: 1258
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.6mm
Length 10.4mm
Height 15.75mm
Technical
Avalanche Energy Rating (Eas) 900 mJ
Drain to Source Breakdown Voltage 300V
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Threshold Voltage 3V
Continuous Drain Current (ID) 30A
Turn-Off Delay Time 65 ns
Fall Time (Typ) 25 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 25ns
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 90m Ω @ 15A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 25 ns
Power Dissipation 160W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 160W Tc
Number of Elements 1
Pin Count 3
Base Part Number STP30N
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin (Sn)
Resistance 90mOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Obsolete
JESD-609 Code e3
Series MDmesh? II
Packaging Tube
Operating Temperature -65°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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