STP28NM60ND
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 23A TO220
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Buying Options
Total Price: USD $5.67
Unit Price: USD $5.6672
≥1 USD $5.6672
≥10 USD $4.526192
≥100 USD $4.049672
≥500 USD $3.57324
≥1000 USD $3.215916
≥3000 USD $3.013437
Inventory: 164
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Dimensions
Width 4.6mm
Length 10.4mm
Height 15.75mm
Technical
Avalanche Energy Rating (Eas) 50 mJ
Pulsed Drain Current-Max (IDM) 92A
Drain to Source Breakdown Voltage 650V
Gate to Source Voltage (Vgs) 25V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 23A
Turn-Off Delay Time 92 ns
Fall Time (Typ) 27 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Rise Time 21.5ns
Gate Charge (Qg) (Max) @ Vgs 62.5nC @ 10V
Current - Continuous Drain (Id) @ 25°C 23A Tc
Input Capacitance (Ciss) (Max) @ Vds 2090pF @ 100V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 150m Ω @ 11.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 23.5 ns
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 190W Tc
Number of Channels 1
Number of Elements 1
Base Part Number STP28N
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series FDmesh? II
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Weight 329.988449mg
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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